 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications * * * * * High voltage and high current : VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 0.8 0.05 1.2 0.05 0.22 0.05 1.2 0.05 Unit: mm Complementary to 2SA2154MFV Lead (Pb) - free 0.4 0.4 High hFE : hFE = 120~400 1 1 3 2 0.13 0.05 Maximum Ratings (Ta = 25C) 0.5 0.05 Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 150 30 150* 150 -55~150 Unit V V V mA mA mW C C VESM JEDEC JEITA TOSHIBA 1.BASE 2.EMITTER 3.COLLECTOR 2-1L1A * : Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6mm) Mount Pad Dimensions (Reference) 0.5 0.45 Weight: 0.0015 g (typ.) 1.15 0.4 0.45 0.4 0.4 Unit: mm 1 2005-06-28 0.32 0.05 0.80 0.05 2SC6026MFV Electrical Characteristics (Ta = 25C) Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Condition VCB = 60 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz Min 120 60 Typ. 0.1 0.95 Max 0.1 0.1 400 0.25 3 Unit A A V MHz pF Note: hFE classification Y (Y): 120~240, GR (G): 200~400 ( ) marking symbol Marking Type Name hFE Classification HY 2 2005-06-28 2SC6026MFV IC - VCE 120 2.0 COLLECTOR CURRENT IC (mA) hFE - IC 1000 1.5 100 80 60 40 20 1.0 0.7 0.5 0.3 0.2 IB = 0.1 mA DC CURRENT GAIN hFE Ta = 100C 25 100 -25 COMMON EMITTERTa = 25C 0 0 1 2 3 4 5 6 7 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 0.1 COMMON EMITTER VCE = 6 V VCE = 1 V 1 10 100 1000 COLLECTOR CURRENT IC (mA) VCE(sat) - IC 1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) VBE(sat) - IC 10 COMMON EMITTER IC/ IB = 10 COMMON EMITTER IC/IB = 10 Ta = 100C 0.1 25 -25 25 1 -25 Ta = 100C 0.01 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA) 0.1 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA) IB - VBE COLLECTOR POWER DISSIPATION PC (mV) PC - Ta 250 Mounted on FR4 board (24.5 mm x 24.5 mm x 1.6 mmt) 1000 BASE CURRENT IB (A) 100 200 Ta = 100C 150 10 25 -25 100 1 COMMON EMITTER VCE = 6V 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 50 0 0 50 100 150 200 BASE-EMITTER VOLTAGE VBE (V) AMBIENT TEMPERATURE Ta (C) 3 2005-06-28 2SC6026MFV 4 2005-06-28 |
Price & Availability of 2SC6026MFV
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |